Enhanced Photovoltaic Performance of Silicon-based Solar Cell Through Optimization of Ga-doped ZnO Layer

Abstract In the present study, impact of deposition pressure and substrate temperature Ga-doped Zinc Oxide (GZO) thin film photovoltaic performance this structure as a transparent conductive oxide (TCE) layer in silicon-based solar cell were investigated. Implementing single target GZO, structural, optical, electrical properties 350 nm thick GZO films with various (5 mTorr, 10 15 mTorr 20 mTorr) at room (RT) (RT, 150 °C, 200 250 °C) fabricated using RF magnetron sputtering technique. The aim here was to find out optimum incorporate them into TCE layer. X-ray diffraction (XRD) atomic force microscopy (AFM) techniques used determine structural all samples. optical transmission measurements performed spectroscopic Ellipsometer band gap values calculated by Tauc plot data. addition, characterization samples analyzed Van der Pauw method Hall measurements. Finally, most promising determined based on optoelectrical characterization. findings indicated that XRD pattern prepared dominated (002) preferential orientation irrespective temperature. AFM showed had dense surface morphology regardless pressures, but clearly changed upon increasing temperatures. did not significantly alter (∼82%) when pressures except for °C (86%) changed. between 3.30 eV 3.36 eV, which can be associated enhancement crystalline quality films. lowest resistivity highest carrier concentration belonged mTorr@200 2.0 × −3 Ω.cm 1.6 cm , respectively. Both (up contributes improving crystallite size, widening gap, lowering resistivity, concentration. order evaluate compare effect both temperature, Silicon-based cells layers (15 mTorr@RT, °C). varying contributed enhancing parameters. Thus, conversion efficiency increased from 9.24% 12.6% sequential optimization It concluded applied during significant its